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| FDD6676 April 2001 FDD6676 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed. extremely low RDS(ON) in a small package. Features * 78 A, 30 V RDS(ON) = 7.5 m @ VGS = 10 V RDS(ON) = 8.5 m @ VGS = 4.5 V * Low gate charge * Fast Switching * High performance trench technology for extremely low RDS(ON) Applications * DC/DC converter * Motor Drives D D G S TO-252 S G Absolute Maximum Ratings Symbol VDSS VGSS ID PD TA=25oC unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation for Single Operation (Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b) Ratings 30 16 78 100 83 3.8 1.6 -55 to +175 Units V V A W TJ, TSTG Operating and Storage Junction Temperature Range C Thermal Characteristics RJC RJA RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1a) (Note 1b) 1.8 40 96 C/W C/W C/W Package Marking and Ordering Information Device Marking FDD6676 Device FDD6676 Reel Size 13'' Tape width 12mm Quantity 2500 units 2001 Fairchild Semiconductor Corporation FDD6676 Rev C(W) FDD6676 Electrical Characteristics Symbol W DSS IAR TA = 25C unless otherwise noted Parameter Drain-Source Avalanche Energy Drain-Source Avalanche Current Test Conditions Single Pulse, VDD = 15 V, ID=21A Min Typ Max Units 370 21 mJ A Drain-Source Avalanche Ratings (Note 2) Off Characteristics BVDSS BVDSS TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) VGS = 0 V, ID = 250 A ID = 250 A,Referenced to 25C VDS = 24 V, VGS = 16 V, VGS = -16 V VGS = 0 V VDS = 0 V VDS = 0 V 30 24 1 100 -100 V mV/C A nA nA On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = 250 A ID = 250 A,Referenced to 25C VGS = 10 V, ID = 16.8 A VGS = 4.5 V, ID = 15.8 A VGS = 10 V, ID = 16.8 A,TJ=125C VGS = 10 V, VDS = 5 V VDS = 5 V, ID = 16.8 A 1 1.5 -5 4.8 5.4 7.3 3 V mV/C m 7.5 8.5 10.5 ID(on) gFS 50 80 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = 15 V, f = 1.0 MHz V GS = 0 V, 5103 836 361 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge 15 VDD = 15 V, VGS = 10 V, ID = 1 A, RGEN = 6 9 87 40 45 VDS = 15V, VGS = 5 V ID = 16.8 A, 13 12 27 18 139 64 63 ns ns ns ns nC nC nC FDD6676 Rev. C(W) FDD6676 Electrical Characteristics (continued) Symbol IS VSD TA = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units 3.2 A V Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 3.2 A (Note 2) 0.7 1.2 Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) RJA = 40C/W when mounted on a 1in2 pad of 2 oz copper b) RJA = 96C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% PD R DS(ON) 3. Maximum current is calculated as: where PD is maximum power dissipation at TC = 25C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A FDD6676 Rev. C(W) FDD6676 Typical Characteristics 50 VGS = 10V 4.5V ID, DRAIN CURRENT (A) 40 3.0V 30 2.5V 20 3.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 1.6 VGS = 3.0V 1.4 3.5V 1.2 4.0V 4.5V 6.0V 1 10V 10 0 0 0.5 1 1.5 0.8 0 10 20 30 40 50 ID, DRAIN CURRENT (A) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 0.02 RDS(ON), ON-RESISTANCE (OHM) 1.8 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.6 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (oC) ID = 16.8A VGS = 10V ID = 8.4 A 0.015 TA = 125oC 0.01 0.005 TA = 25oC 0 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation withTemperature 50 IS, REVERSE DRAIN CURRENT (A) VDS = 5.0V ID, DRAIN CURRENT (A) 40 Figure 4. On-Resistance Variation with Gate-to-Source Voltage 100 VGS = 0V 10 TA = 125oC 1 0.1 0.01 0.001 0.0001 25oC -55oC 30 TA = 125oC 20 25oC 10 -55oC 0 1 1.5 2 2.5 3 3.5 VGS, GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature FDD6676 Rev. C(W) FDD6676 Typical Characteristics 10 VGS, GATE-SOURCE VOLTAGE (V) ID = 16.8A 8 CAPACITANCE (pF) 15V 6 VDS = 5.0V 10V 7000 6000 CISS 5000 4000 3000 2000 COSS 1000 CRSS f = 1 MHz VGS = 0 V 4 2 0 0 10 20 30 40 50 60 70 80 90 Qg, GATE CHARGE (nC) 0 0 5 10 15 20 25 30 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics 1000 P(pk), PEAK TRANSIENT POWER (W) 50 Figure 8. Capacitance Characteristics ID, DRAIN CURRENT (A) 100 RDS(ON) LIMIT 10 1s 10s 1 VGS = 10V SINGLE PULSE RJA = 96oC/W TA = 25oC 0.01 0.1 1 10 DC 1ms 10ms 100ms 100s 40 SINGLE PULSE RJA = 96C/W TA = 25C 30 20 0.1 10 100 0 0.001 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec) Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) + RJA RJA = 96 C/W P(pk) t1 t2 SINGLE PULSE o 0.1 0.1 0.05 0.02 0.01 0.01 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 11. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD6676 Rev. C(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM DISCLAIMER FAST FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM Star* PowerTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM UltraFET VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H1 |
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